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The spin phenomena observed at a clean metall-insulator interface are
typically reduced to Rashba-Edelstein effect, that leads to spin accumulation
over a few monolayers. We demonstrate that the presence of interface disorder
significantly expands the range of potential phenomena. Specifically, the skew
scattering at the metal - insulator boundary gives rise to the "kinetic
Rashba-Edelstein effect", where spin accumulation occurs on a much larger
length scale comparable to mean free path. Moreover, at higher orders of
spin-orbit interaction, skew scattering is accompanied with spin relaxation
resulting in the interface spin-Hall effect - a conversion of electrical
current to spin current at the metal surface. Unlike the conventional spin-Hall
effect, this phenomenon persists even within the Born approximation. These two
predicted phenomena can dominate the spin density and spin current in devices
of intermediate thickness.
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